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1

Physics and Technology of Silicon Carbide Devices || Applications of SiC-Based Thin Films in Electronic and MEMS Devices

Hijikata, Yasuto

Year:

2012

Language:

english

File:

PDF, 443 KB

english, 2012

2

Physics and Technology of Silicon Carbide Devices || Ion Synthesis of SiC and Its Instability at High Temperatures

Hijikata, Yasuto

Year:

2012

File:

PDF, 8.11 MB

2012

3

Model Calculation of SiC Oxide Growth Rate Based on the Silicon and Carbon Emission Model

Hijikata, Yasuto, Yaguchi, Hiroyuki, Yoshida, Sadafumi

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 303 KB

english, 2009

4

Effects of Nitrogen Impurity Concentration on Nitrogen-Vacancy Center Formation in 4H-SiC

Narahara, Takuma, Sato, Shin Ichiro, Kojima, Kazutoshi, Yamazaki, Yuichi, Hijikata, Yasuto, Ohshima, Takeshi

Journal:

Materials Science Forum

Year:

2020

File:

PDF, 693 KB

2020

5

A Kinetic Model of Silicon Carbide Oxidation Based on the Interfacial Silicon and Carbon Emission Phenomenon

Hijikata, Yasuto, Yaguchi, Hiroyuki, Yoshida, Sadafumi

Journal:

Applied Physics Express

Year:

2009

Language:

english

File:

PDF, 141 KB

english, 2009

6

Model Calculations of SiC Oxide Growth Rate at Various Oxidation Temperatures Based on the Silicon and Carbon Emission Model

Hijikata, Yasuto, Yaguchi, Hiroyuki, Yoshida, Sadafumi

Journal:

Materials Science Forum

Year:

2010

Language:

english

File:

PDF, 348 KB

english, 2010

7

Photoluminescence Study of Oxidation-Induced Stacking Faults in 4H-SiC Epilayers

Miyano, Yutaro, Yagi, Shuhei, Hijikata, Yasuto, Yaguchi, Hiroyuki

Journal:

Materials Science Forum

Year:

2015

Language:

english

File:

PDF, 394 KB

english, 2015

8

Si Emission into the Oxide Layer during Oxidation of Silicon Carbide

Hijikata, Yasuto, Akasaka, Yurie, Yagi, Shuhei, Yaguchi, Hiroyuki

Journal:

Materials Science Forum

Year:

2014

Language:

english

File:

PDF, 1.20 MB

english, 2014

9

Room Temperature Electrical Control of Single Photon Sources at 4H-SiC Surface

Sato, Shin-ichiro, Honda, Tomoya, Makino, Takahiro, Hijikata, Yasuto, Lee, Sang-Yun, Ohshima, Takeshi

Journal:

Year:

2018

Language:

english

File:

PDF, 6.51 MB

english, 2018

10

Off-Angle Dependence of Characteristics of 4H-SiC-Oxide Interfaces

Hijikata, Yasuto, Yaguchi, Hiroyuki, Yoshida, Sadafumi, Takata, Y., Kobayashi, K., Nohira, H., Hattori, T.

Journal:

Materials Science Forum

Year:

2006

Language:

english

File:

PDF, 451 KB

english, 2006

11

Micro-Photoluminescence Study on the Influence of Oxidation on Stacking Faults in 4H-SiC Epilayers

Yamagata, Hikaru, Yagi, Shuhei, Hijikata, Yasuto, Yaguchi, Hiroyuki

Journal:

Applied Physics Express

Year:

2012

Language:

english

File:

PDF, 1.07 MB

english, 2012

12

Model Calculation of SiC Oxidation Rates in the Thin Oxide Regime

Hijikata, Yasuto, Yamamoto, Takeshi, Yaguchi, Hiroyuki, Yoshida, Sadafumi

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 338 KB

english, 2009

13

Si and C emission into the oxide layer during the oxidation of silicon carbide and its influence on the oxidation rate

Hijikata, Yasuto, Asafuji, Ryosuke, Konno, Ryotaro, Akasaka, Yurie, Shinoda, Ryo

Journal:

Year:

2015

File:

PDF, 644 KB

2015

14

Physics and Technology of Silicon Carbide Devices || PECVD Amorphous Silicon Carbide (Î±-SiC) Layers for MEMS Applications

Hijikata, Yasuto

Year:

2012

File:

PDF, 813 KB

2012

15

Growth of high-quality hexagonal InN on 3C-SiC (001) by molecular beam epitaxy

Hiroyuki Yaguchi, Yoshihiro Kitamura, Kenji Nishida, Yohei Iwahashi, Yasuto Hijikata, Sadafumi Yoshida

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 180 KB

english, 2005

16

RF-MBE growth of semipolar InN(10-13) and InGaN(10-13) on GaAs(110)

Misao Orihara, Shuhei Yagi, Yasuto Hijikata, Hiroyuki Yaguchi

Journal:

physica status solidi (c)

Year:

2012

Language:

english

File:

PDF, 667 KB

english, 2012

17

Oxygen-Partial-Pressure Dependence of SiC Oxidation Rate Studied by In Situ Spectroscopic Ellipsometry

Yamamoto, Takeshi, Hijikata, Yasuto, Yaguchi, Hiroyuki, Yoshida, Sadafumi

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 1.57 MB

english, 2009

18

Model Calculations of SiC Oxide Growth Rates at Sub-Atmospheric Pressures Using the Si and C Emission Model

Hijikata, Yasuto, Yagi, Shuhei, Yaguchi, Hiroyuki, Yoshida, Sadafumi

Journal:

Materials Science Forum

Year:

2013

Language:

english

File:

PDF, 381 KB

english, 2013

19

Differences in SiC thermal oxidation process between crystalline surface orientations observed by in-situ spectroscopic ellipsometry

Goto, Daisuke, Hijikata, Yasuto, Yagi, Shuhei, Yaguchi, Hiroyuki

Journal:

Journal of Applied Physics

Year:

2015

Language:

english

File:

PDF, 962 KB

english, 2015

20

Physics and Technology of Silicon Carbide Devices || Etching of Silicon Carbide Using Chlorine Trifluoride Gas

Hijikata, Yasuto

Year:

2012

File:

PDF, 2.67 MB

2012

21

Analysis of Electronic Structures of Nitrogen δ-Doped GaAs Superlattices for High Efficiency Intermediate Band Solar Cells

Noguchi, Shunsuke, Yagi, Shuhei, Sato, Daisuke, Hijikata, Yasuto, Onabe, Kentaro, Kuboya, Shigeyuki, Yaguchi, Hiroyuki

Journal:

IEEE Journal of Photovoltaics

Year:

2013

Language:

english

File:

PDF, 490 KB

english, 2013

22

Characterization of 4H-SiC–SiO2 Interfaces by a Deep Ultraviolet Spectroscopic Ellipsometer

Seki, H., Wakabayashi, T., Hijikata, Yasuto, Yaguchi, Hiroyuki, Yoshida, Sadafumi

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 294 KB

english, 2009

23

Physics and Technology of Silicon Carbide Devices || Physics Behind the Ohmic Nature in Silicon Carbide Contacts

Hijikata, Yasuto

Year:

2012

File:

PDF, 5.03 MB

2012

24

[IEEE 2011 37th IEEE Photovoltaic Specialists Conference (PVSC) - Seattle, WA, USA (2011.06.19-2011.06.24)] 2011 37th IEEE Photovoltaic Specialists Conference - Quantum well double barrier resonant tunneling structures for selective contacts of hot carrier solar cells

Yagi, Shuhei, Hijikata, Yasuto, Okada, Yoshitaka, Yaguchi, Hiroyuki

Year:

2011

Language:

english

File:

PDF, 1.22 MB

english, 2011

25

AIP Conference Proceedings [AIP THE PHYSICS OF SEMICONDUCTORS: Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012 - Zurich, Switzerland (29 July–3 August 2012)] - Biexciton emission from single isoelectronic traps formed by nitrogen-nitrogen pairs in GaAs

Takamiya, Kengo, Fukushima, Toshiyuki, Yagi, Shuhei, Hijikata, Yasuto, Mochizuki, Toshimitsu, Yoshita, Masahiro, Akiyama, Hidefumi, Kuboya, Shigeyuki, Onabe, Kentaro, Katayama, Ryuji, Yaguchi, Hiroyuk

Year:

2013

Language:

english

File:

PDF, 327 KB

english, 2013

26

Radiation response of silicon carbide metal–oxide–semiconductor transistors in high dose region

Ohshima, Takeshi, Yokoseki, Takashi, Murata, Koichi, Matsuda, Takuma, Mitomo, Satoshi, Abe, Hiroshi, Makino, Takahiro, Onoda, Shinobu, Hijikata, Yasuto, Tanaka, Yuki, Kandori, Mikio, Okubo, Shuichi, Y

Journal:

Japanese Journal of Applied Physics

Year:

2016

Language:

english

File:

PDF, 660 KB

english, 2016

27

Radiation Response of Negative Gate Biased SiC MOSFETs

Takeyama, Akinori, Makino, Takahiro, Okubo, Shuichi, Tanaka, Yuki, Yoshie, Toru, Hijikata, Yasuto, Ohshima, Takeshi

Journal:

Year:

2019

File:

PDF, 1.41 MB

2019

28

Physics and Technology of Silicon Carbide Devices || Characterization of Defects Evolution in Bulk SiC by Synchrotron X-Ray Imaging

Hijikata, Yasuto

Year:

2012

File:

PDF, 1.50 MB

2012

29

RF-MBE growth of cubic InN nano-scale dots on cubic GaN

Suzuki, Junichiro, Orihara, Misao, Yagi, Shuhei, Hijikata, Yasuto, Yaguchi, Hiroyuki

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 6.37 MB

english, 2013

30

Spatial Mapping of the Carrier Concentration and Mobility in SiC Wafers by Micro Fourier-Transform Infrared Spectroscopy

Yaguchi, Hiroyuki, Narita, K., Hijikata, Yasuto, Yoshida, Sadafumi, Nakashima, Shinichi, Oyanagi, Naoki

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 297 KB

2002

31

Characterization of Oxide Films on SiC Epitaxial (000-1) Faces by Angle-Resolved Photoemission Spectroscopy Measurements Using Synchrotron Radiation

Hijikata, Yasuto, Yaguchi, Hiroyuki, Yoshida, Sadafumi, Takata, Y., Kobayashi, K., Shin, S., Nohira, H., Hattori, Takeshi

Journal:

Materials Science Forum

Year:

2005

Language:

english

File:

PDF, 293 KB

english, 2005

32

[IEEE 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) - Tampa, FL, USA (2013.06.16-2013.06.21)] 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) - Optical absorption by E+ miniband of GaAs:N δ-doped superlattices

Yagi, Shuhei, Noguchi, Shunsuke, Hijikata, Yasuto, Kuboya, Shigeyuki, Onabe, Kentaro, Okada, Yoshitaka, Yaguchi, Hiroyuki

Year:

2013

Language:

english

File:

PDF, 610 KB

english, 2013

33

Improvement of radiation response of SiC MOSFETs under high temperature and humidity conditions

Takeyama, Akinori, Matsuda, Takuma, Yokoseki, Takashi, Mitomo, Satoshi, Murata, Koichi, Makino, Takahiro, Onoda, Shinobu, Okubo, Shuichi, Tanaka, Yuki, Kandori, Mikio, Yoshie, Toru, Hijikata, Yasuto,

Journal:

Japanese Journal of Applied Physics

Year:

2016

Language:

english

File:

PDF, 820 KB

english, 2016

34

X-Ray Photoelectron Spectroscopy Studies of Post-Oxidation Process Effects on Oxide/SiC Interfaces

Hijikata, Yasuto, Yaguchi, Hiroyuki, Yoshikawa, Masahito, Yoshida, Sadafumi

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 309 KB

2002

35

Physics and Technology of Silicon Carbide Devices || Materials and Processing for Gate Dielectrics on Silicon Carbide (SiC) Surface

Hijikata, Yasuto

Year:

2012

Language:

english

File:

PDF, 1.33 MB

english, 2012

36

Photoluminescence study of oxidation-induced faults in 4H-SiC epilayers

Miyano, Yutaro, Asafuji, Ryosuke, Yagi, Shuhei, Hijikata, Yasuto, Yaguchi, Hiroyuki

Journal:

Year:

2015

Language:

english

File:

PDF, 3.49 MB

english, 2015

37

RF-MBE growth of InN on 4H-SiC (0001) with off-angles

Misao Orihara, Shin Takizawa, Takanori Sato, Yuuki Ishida, Sadafumi Yoshida, Yasuto Hijikata, Hiroyuki Yaguchi

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 532 KB

english, 2010

38

Physics and Technology of Silicon Carbide Devices || Silicon Carbide Power MESFET

Hijikata, Yasuto

Year:

2012

File:

PDF, 1.56 MB

2012

39

Simultaneous Determination of Carrier Concentration, Mobility, and Thickness of SiC Homoepilayers by Infrared Reflectance Spectroscopy

Oishi, Shingo, Hijikata, Yasuto, Yaguchi, Hiroyuki, Yoshida, Sadafumi

Journal:

Japanese Journal of Applied Physics

Year:

2006

Language:

english

File:

PDF, 148 KB

english, 2006

40

Oxygen partial pressure dependence of the SiC oxidation process studied by in-situ spectroscopic ellipsometry

Kouda, Keiko, Hijikata, Yasuto, Yagi, Shuhei, Yaguchi, Hiroyuki, Yoshida, Sadafumi

Journal:

Journal of Applied Physics

Year:

2012

Language:

english

File:

PDF, 786 KB

english, 2012

41

Fabrication of MOS Capacitors by Wet Oxidation of p-Type 4H-SiC Preamorphized by Nitrogen Ion Implantation

Hijikata, Yasuto, Yoshida, Sadafumi, Moscatelli, Francesco, Poggi, Antonella, Solmi, Sandro, Cristiani, Stefano, Nipoti, Roberta

Journal:

Materials Science Forum

Year:

2007

Language:

english

File:

PDF, 225 KB

english, 2007

42

Characterization of the Interfaces between SiC and Oxide Films by Spectroscopic Ellipsometry

Tomioka, Yuichi, Iida, T., Midorikawa, M., Tukada, H., Yoshimoto, K., Hijikata, Yasuto, Yaguchi, Hiroyuki, Yoshikawa, Masahito, Ishida, Yuuki, Kosugi, Ryouji, Yoshida, Sadafumi

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 349 KB

2002

43

Oxide Growth Rate Enhancement of Silicon Carbide (0001) Si-Faces in Thin Oxide Regime

Yamamoto, Takeshi, Hijikata, Yasuto, Yaguchi, Hiroyuki, Yoshida, Sadafumi

Journal:

Japanese Journal of Applied Physics

Year:

2008

Language:

english

File:

PDF, 137 KB

english, 2008

44

Physics and Technology of Silicon Carbide Devices || Thermal Oxidation Mechanism of Silicon Carbide

Hijikata, Yasuto

Year:

2012

Language:

english

File:

PDF, 4.92 MB

english, 2012

45

Surface Orientation Dependence of SiC Oxidation Process Studied by In Situ Spectroscopic Ellipsometry

Goto, Daisuke, Yagi, Shuhei, Hijikata, Yasuto, Yaguchi, Hiroyuki

Journal:

Materials Science Forum

Year:

2015

Language:

english

File:

PDF, 918 KB

english, 2015

46

Physics and Technology of Silicon Carbide Devices || Nondestructive and Contactless Characterization Method for Spatial Mapping of the Thickness and Electrical Properties in Homo-Epitaxially Grown SiC Epilayers Using Infrared Reflectance Spectroscopy

Hijikata, Yasuto

Year:

2012

File:

PDF, 1.84 MB

2012

47

Photoemission Spectroscopic Studies on Oxide/SiC Interfaces Formed by Dry and Pyrogenic Oxidation

Hijikata, Yasuto, Yaguchi, Hiroyuki, Ishida, Yuuki, Yoshikawa, Masahito, Kamiya, Toshio, Yoshida, Sadafumi

Journal:

Materials Science Forum

Year:

2004

Language:

english

File:

PDF, 216 KB

english, 2004

48

Enhancement of ODMR Contrasts of Silicon Vacancy in SiC by Thermal Treatment

Chiba, Yoji, Yamazaki, Yuichi, Sato, Shin Ichiro, Makino, Takahiro, Yamada, Naoto, Satoh, Takahiro, Hijikata, Yasuto, Ohshima, Takeshi

Journal:

Materials Science Forum

Year:

2020

File:

PDF, 817 KB

2020

49

Conversion Efficiency of Intermediate Band Solar Cells with GaAs:N δ-Doped Superlattices

Yagi, Shuhei, Noguchi, Shunsuke, Hijikata, Yasuto, Kuboya, Shigeyuki, Onabe, Kentaro, Yaguchi, Hiroyuki

Journal:

Japanese Journal of Applied Physics

Year:

2013

Language:

english

File:

PDF, 518 KB

english, 2013

50

Measurements of the Depth Profile of the Refractive Indices in Oxide Films on SiC by Spectroscopic Ellipsometry

Iida, Takeshi, Tomioka, Yuichi, Yoshimoto, Kazuo, Midorikawa, Masahiko, Tukada, Hiroyuki, Orihara, Misao, Hijikata, Yasuto, Yaguchi, Hiroyuki, Yoshikawa, Masahito, Itoh, Hisayoshi, Ishida, Yuuki, Yosh

Journal:

Japanese Journal of Applied Physics

Year:

2002

Language:

english

File:

PDF, 102 KB

english, 2002

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